| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| TIP127 TIP125 TIP126 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
TAI-SAW TECHNOLOGY CO.,...
|
| TIP140T TIP141T TIP142T |
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE- EMITTER SHUNT RESISTORS
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP100 TIP102 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
| MJ10005 |
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
New Jersey Semi-Conduct...
|
| MJ10007-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10009-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10005-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10006 MJ10007 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE
|
Boca Semiconductor Corp...
BOCA[Boca Semiconductor Corporation]
|
| KGEA-BFCAM KGEA-BFCAM-B-0207-G KGEA-BFCAM-B-0207-J |
Emitter Antenna Low Profile 85x13x7mm Housing Plastic Base-Potted and Outside Connector unsealed&sealed
Emitter Antenna Low Profile 85x13x7mm Housing plastic base-potted and outside connector unsealed & sealed
|
PREMO CORPORATION S.L
|
| TIP147 TIP145 TIP146 TIP147TU TIP146TU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
